Fiona Wang
London,United Kingdom
Summary
PhD researcher with extensive experience in optoelectronics and III-V semiconductor materials. Led projects on mid-infrared optoelectronic device development, contributing expertise in simulation and fabrication. Focused on advancing quantum dot devices and enhancing material growth on InP/Si substrates. Committed to improving productivity and verifying laser feasibility through precise simulation predictions.
Overview
1
1
year of professional experience
Work history
Research assistant
Peking University
2021.11 - 2022.06
- Development of GaN-HEMT fabrication process.
Created customised layout for effective monitoring of fabrication processes. - Established ion implantation parameters to ensure precise ion depth control.
- Documented all procedures meticulously to ensure repeatability of experiments.
TCAD Engineer
Giga device
Shanghai
2021.09 - 2021.11
- Performed detailed analysis of electrical field optimisations and breakdown behaviour in GaN-based single-avalanche photodetector using Synopsys TCAD.
- Coordinated with other engineers and professionals on large scale projects.
- Resolved complex issues, applying troubleshooting and critical thinking to address numerous technical solutions.
Education
Ph.D. - Electronic & Electrical Engineering
University College London (UCL)
2023.10 -
MSc - Compound Semiconductor Physics
Cardiff University
2022.10 - 2023.06
MSc - Electrical and Electronics Engineering
Chinese Academy of Sciences
2018.09 - 2021.06
BSc - Electrical and Electronics Engineering
Xi'an University of Technology
2014.09 - 2018.06
Skills
- Semiconductor Materials and devise background : Proficient in wide bandgap
semiconductor materials and device structure - Modelling & Simulation: Expertise in material and device modelling, Proficient in Lumerical, Nextnano, Silvaco TCAD and Sentaurus TCAD
- Optical Measurements: Experience in constructing and using Fourier optical microscopes, and spectrometers with Labview control
- Electrical test and analysis: Basic I-V curve test, C-V curve test, Four-Point Probe, temperature-dependent investigations
- Fab Processes: Knowledge in photolithography, dry etching, wet etching metal deposition, PECVD, ion implantation and wire bonding, especially for III-V semiconductors
- Material Growth Technologies: Learned about molecular beam epitaxy
- Film and Wafer Characterization Analysis： SEM, AFM, FIB
- Risk assessment capability
Research project
- Modeling on GaN avalanche photodiodes
A flip-chip GaN p-i-n-i-n avalanche photodiode (APD) which integrates the merits of the prevailing APDs—hole-initiated multiplication process and frontillumination is proposed and studied via simulation. A new structure provided a guidance for APD design.
- Investigation on GaN HEMT degradation dynamics
Temperature-dependent dynamic degradation was investigated for C-doped GaN high electron mobility transistor (HEMT) from 300 to 20 K. A trapping-effect induced degradation dynamics were comprehensively investigated.
- Development on mid-infrared InAs/InP quantum-dot lasers
Led the project on the development on mid-infrared InAs/InP quantum-dot lasers, enclose a cycle from simulation design, wafer growth via MBE, fabrication, measurement and data analysis for further improvement. To date, we achieve the first-time mid-infrared InAs/InP quantum-dot lasers, pulished on Light: Science & Application.
PUBLICATIONS & CONFERENCES
-Selected publications-
Name: Mid-infrared InAs/InP quantum-dot lasers
Journal: Light: Science & Applications
Name: Low threshold InAs/InP quantum dot lasers
Journal: Optics Express
Name: Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K
Journal: IEEE
Name: Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMTs
Journal: IEEE
Timeline
Ph.D. - Electronic & Electrical Engineering
University College London (UCL)
2023.10 -
MSc - Compound Semiconductor Physics
Cardiff University
2022.10 - 2023.06
Research assistant
Peking University
2021.11 - 2022.06
TCAD Engineer
Giga device
2021.09 - 2021.11
MSc - Electrical and Electronics Engineering
Chinese Academy of Sciences
2018.09 - 2021.06
BSc - Electrical and Electronics Engineering
Xi'an University of Technology
2014.09 - 2018.06